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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS) = 700V(Min) *High Switching Speed APPLICATIONS *Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications. Typical applications: *Switching regulators *Inverters *Solenoid and relay drivers *Motor controls *Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCEV VCEO(SUS) VEBO IC ICM IB B MJE8500 PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation@TC=25 Junction Temperature Storage Temperature VALUE 1200 700 8 2.5 5 2 4 65 125 -65~125 UNIT V V V A A A A W IBM PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.54 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(sat) ICEV ICER IEBO hFE COB PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain Output Capacitance CONDITIONS IC=100mA ; IB=0 IC= 1A; IB= 0.33A IC= 1A; IB= 0.33A,TC=100 B B MJE8500 MIN 700 TYP. MAX UNIT V 2.0 3.0 5.0 1.5 1.5 0.25 5.0 5.0 1.0 7.5 50 250 V V V mA mA mA IC= 2.5A; IB= 1A IC= 1A; IB= 0.33A IC= 1A; IB= 0.33A,TC=100 B B VCEV=1200V;VBE(off)=1.5V VCEV=1200V;VBE(off)=1.5V;TC=100 VCE= 1200V; RBE= 50,TC= 100 VEB= 7V; IC=0 IC= 0.5A ; VCE= 5V IE= 0; VCB= 10V; ftest=1.0kHz pF Switching times;Resistive Load td tr ts tf Delay Time Rise Time Storage Time Fall Time 45 200 1000 500 200 2000 4000 2000 ns ns ns ns IC= 1A , VCC= 500V, VBE(off)= 5V IB1= 0.33A; tp= 50s Duty Cycle2.0% isc Websitewww.iscsemi.cn 2 |
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